The 2nm GAA process offers a significant performance and efficiency boost over Samsung’s older manufacturing processes, but the company’s Foundry Vice President says that shrinking the nodes only offers minor benefits and believes that there is a requirement to explore other alternatives. For this purpose, the Korean technology behemoth has proposed a ‘Design and Process Integration Optimization’ (DTCO) method, which researches modifications that can be applied to bolster the prowess of cutting-edge nodes.

One area that Samsung has improved upon is transitioning from FinFET to GAA structures, maximizing current control capabilities, and allowing for its 2nm node to introduce a significant number of improvements

Speaking at the eighth Semiconductor Industry-Academia-Research Exchange Work

See Full Page